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PD - 97133
IRF6674TRPbF
DirectFET Power MOSFET
Typical values (unless otherwise specified)
RoHS Compliant l Lead-Free (Qualified up to 260C Reflow) l Application Specific MOSFETs l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques
l
VDSS Qg
tot
VGS Qgd
8.3nC
RDS(on)
9.0m@ 10V
60V max 20V max 24nC
Vgs(th)
4.0V
MZ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SH SJ SP MZ MN
DirectFET ISOMETRIC
Description
The IRF6674PbF combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6674PbF is optimized for primary side sockets in forward and push-pull isolated DC-DC topologies, for 48V and 36V-60V input voltage range systems. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DCDC converters.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM EAS IAS
50
Typical R DS (on) (m)
Max.
Units
V
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche CurrentAh
g
e e f
h
VGS, Gate-to-Source Voltage (V)
60 20 13.4 10.7 67 134 98 13.4
14 12 10 8 6 4 2 0 0 10 20 ID= 13.4A VDS = 48V VDS = 30V
A
mJ A
40 30 20 10 0 4
ID = 13.4A
TJ = 125C TJ = 25C 6 8 10 12 14 VGS, Gate-to-Source Voltage (V) 16
30
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.272mH, RG = 25, IAS = 13.4A.
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IRF6674TRPbF
Electrical Characteristic @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Coss Coss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance
Min.
60 --- --- 3.0 --- --- --- --- --- 16 --- --- --- --- --- --- ---
---
Typ.
--- 0.07 9.0 4.0 -11 --- --- --- --- --- 24 5.4 1.9 8.3 8.4 10.2 14 1.0 7.0 12 12 8.7 1350 390 105 1580 290
Max.
--- --- 11 4.9 --- 20 250 100 -100 --- 36 --- --- 12 --- --- --- --- --- --- --- --- --- --- --- --- ---
Units
V V/C m V mV/C A nA S
Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 1mA VGS = 10V, ID = 13.4A i VDS = VGS, ID = 100A VDS = 60V, VGS = 0V VDS = 48V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 25V, ID = 13.4A VDS = 30V
nC
VGS = 10V ID = 13.4A See Fig. 15
nC
VDS = 16V, VGS = 0V VDD = 30V, VGS = 10V ID = 13.4A i
--- --- --- --- --- --- --- --- ---
ns
RG = 6.2 VGS = 0V
pF
VDS = 25V = 1.0MHz VGS = 0V, VDS = 1.0V, f=1.0MHz VGS = 0V, VDS = 48V, f=1.0MHz
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) TJ= 25C Pulsed Source Current (Body Diode) g --- --- --- --- 32 36 1.3 48 54 V ns nC Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min.
--- ---
Typ.
--- ---
Max.
67
Units
A
Conditions
MOSFET symbol showing the integral reverse
G S p-n junction diode. TJ = 25C, IS = 13.4A, VGS = 0V i D
134
TJ = 25C, IF = 13.4A, VDD = 50V di/dt = 100A/s c
Notes:
Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400s; duty cycle 2%.
2
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IRF6674TRPbF
Absolute Maximum Ratings
PD @TA = 25C PD @TA = 70C PD @TC = 25C TP TJ TSTG Power Dissipation Power Dissipation Power Dissipation Peak Soldering Temperature Operating Junction and Storage Temperature Range
e e f
Parameter
Max.
3.6 2.3 89 270 -40 to + 150
Units
W
C
Thermal Resistance
RJA RJA RJA RJC RJ-PCB
10
Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted
el jl kl fl
Parameter
Typ.
--- 12.5 20 --- 1.0
Max.
35 --- --- 1.4 ---
Units
C/W
Thermal Response ( Z thJC )
1
D = 0.50 0.20
0.1
0.10 0.05 0.02 0.01
J J 1
R1 R1 2
R2 R2
R3 R3 3
R4 R4 C 4
1
2
3
4
0.01
SINGLE PULSE ( THERMAL RESPONSE )
0.001 1E-006 1E-005 0.0001
Ci= i/Ri Ci i/Ri
Ri (C/W) 0.023002 0.269754 0.770575 0.337715
(sec)
0.000008 0.000072 0.001409 0.005778
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = Pdm x Zthjc + Tc
0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Mounted on minimum footprint full size board with metalized Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple incontact with top (Drain) of part. back and with small clip heatsink. R is measured at TJ of approximately 90C. Used double sided cooling, mounting pad with large heatsink.
Notes:
Surface mounted on 1 in. square Cu board (still air).
Mounted on minimum footprint full size board with metalized back and with small clip heatsink. (still air)
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IRF6674TRPbF
100 100
ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)
TOP
10 6.0V
BOTTOM
VGS 15V 10V 8.0V 7.0V 6.0V
6.0V 10
TOP VGS 15V 10V 8.0V 7.0V 6.0V
BOTTOM
60s PULSE WIDTH
Tj = 25C 1 0.1 1 VDS , Drain-to-Source Voltage (V) 10 1 0.1
60s PULSE WIDTH
Tj = 150C 1 VDS , Drain-to-Source Voltage (V) 10
Fig 4. Typical Output Characteristics
1000
ID, Drain-to-Source Current()
Fig 5. Typical Output Characteristics
2.0 ID = 13.4A
Typical RDS(on) (Normalized)
VGS = 10V
100 TJ = 150C TJ = 25C TJ = -40C
1.5
10
1.0
1 VDS = 10V 0.1 2.0 4.0 6.0 60s PULSE WIDTH 8.0 10.0 12.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
Fig 6. Typical Transfer Characteristics
100000
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd
Fig 7. Normalized On-Resistance vs. Temperature
50 TA= 25C
(Normalized)
40 VGS = 7.0V 30 VGS = 8.0V VGS = 10V VGS = 15V 20
10000
C, Capacitance(pF)
1000
Coss Crss
100
Typical R
DS(on)
Ciss
10
10 1 10 VDS , Drain-to-Source Voltage (V) 100
0 0 20 40 60 80 100
ID, Drain Current (A)
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
Fig 9. Typical On-Resistance vs. Drain Current
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IRF6674TRPbF
1000
1000
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS (on) 100 100sec 10 1msec 1
100
10
TJ = 150C TJ = 25C TJ = -40C
1 VGS = 0V 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD , Source-to-Drain Voltage (V)
TC = 25C Tj = 150C Single Pulse 0.1 1
10msec
0.1 10 100 VDS , Drain-toSource Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
14 12 5.0
Fig11. Maximum Safe Operating Area
VGS(th) Gate threshold Voltage (V)
4.5
ID , Drain Current (A)
10 8 6 4 2 0 25 50 75 100 125 150
4.0
3.5
ID = 250A ID = 100A
3.0
2.5
2.0 -75 -50 -25 0 25 50 75 100 125 150
TJ , Ambient Temperature (C)
TJ , Temperature ( C )
Fig 12. Maximum Drain Current vs. Ambient Temperature
400
Fig 13. Typical Threshold Voltage vs. Junction Temperature
ID 4.5A 9.3A BOTTOM 26.8A
TOP
EAS, Single Pulse Avalanche Energy (mJ)
300
200
100
0 25 50 75 100 125 150
Starting TJ, Junction Temperature (C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
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IRF6674TRPbF
Id Vds Vgs
L
0
DUT
20K 1K
S
VCC
Vgs(th)
Qgodr
Qgd
Qgs2 Qgs1
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V(BR)DSS
15V
tp
DRIVER
VDS
L
VGS RG
D.U.T
IAS
+ V - DD
A
20V
tp
0.01
I AS
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
VDS VGS RG
RD
VDS 90%
D.U.T.
+
- VDD
V10V GS
Pulse Width 1 s Duty Factor 0.1 %
10% VGS
td(on) tr t d(off) tf
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
6
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IRF6674TRPbF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
*
* * * *
dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
**
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET(R) Power MOSFETs
DirectFET Substrate and PCB Layout, MZ Outline (Medium Size Can, Z-Designation).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
G=GATE D=DRAIN S=SOURCE
D S G S D
D
D
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
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IRF6674TRPbF
DirectFET Outline Dimension, MZ Outline (Medium Size Can, Z-Designation).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
DIMENSIONS
CODE A B C D E F G H J K L M N P METRIC MIN MAX 6.25 6.35 4.80 5.05 3.85 3.95 0.35 0.45 0.68 0.72 0.68 0.72 0.93 0.97 0.63 0.67 0.28 0.32 1.13 1.26 2.53 2.66 0.59 0.70 0.03 0.08 0.08 0.17 IMPERIAL MIN MAX 0.246 0.250 0.189 0.201 0.152 0.156 0.014 0.018 0.027 0.028 0.027 0.028 0.037 0.038 0.025 0.026 0.011 0.013 0.044 0.050 0.100 0.105 0.023 0.028 0.001 0.003 0.003 0.007
DirectFET Part Marking
GATE MARKING LOGO PART NUMBER BATCH NUMBER DATE CODE
Line above the last character of the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
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IRF6674TRPbF
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6674MTRPBF). For 1000 parts on 7" reel, order IRF6674MTR1PBF REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) IMPERIAL IMPERIAL METRIC METRIC MIN MAX MIN CODE MAX MIN MAX MIN MAX 6.9 N.C 12.992 A 330.0 N.C 177.77 N.C N.C 0.75 0.795 B N.C 20.2 N.C 19.06 N.C N.C 0.53 0.504 C 0.50 12.8 0.520 13.5 13.2 12.8 0.059 0.059 D N.C 1.5 1.5 N.C N.C N.C 2.31 3.937 E N.C 100.0 58.72 N.C N.C N.C N.C N.C F 0.53 N.C N.C 0.724 18.4 13.50 G 0.47 0.488 N.C 12.4 11.9 0.567 14.4 12.01 H 0.47 0.469 11.9 11.9 N.C 0.606 15.4 12.01
LOADED TAPE FEED DIRECTION
NOTE: CONTROLLING DIMENSIONS IN MM
CODE A B C D E F G H
DIMENSIONS IMPERIAL METRIC MIN MAX MIN MAX 0.311 0.319 7.90 8.10 0.154 0.161 3.90 4.10 0.469 0.484 11.90 12.30 0.215 0.219 5.45 5.55 0.201 0.209 5.10 5.30 0.256 0.264 6.50 6.70 0.059 N.C 1.50 N.C 0.059 0.063 1.50 1.60
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.4/08
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